fea tures t renchfet power mosfet 175 c maximum junction temperature 100% r g t ested 1 n-channel 60-v (d-s) mosfet product summary v ds (v) r d s(on) ( ) i d (a) 60 0.016 @ v gs = 10 v 40 d g s n-channel mosfet t o-252 s gd t op view absolute maximum ratings (t a = 25 c unless other wise noted) parameter symbol limit unit drain-source voltage v ds 60 v gate-source v oltage v gs 20 v continuous drain current (t j = 175 c) b t c = 25 c i d 40 continuous drain current (t j = 175 c) b t c = 125 c i d 30 pulsed drain current i dm 60 a continuous source current (diode conduction) i s 40 a valanche current i ar 40 repetitive a valanche energy (duty cycle 1%) l = 0.1 mh e ar 80 mj maximum power dissipation t c = 25 c p 136 b w maximum power dissipation t a = 25 c p d 3 a w operating junction and storage t emperature range t j , t st g ? 55 to 175 c thermal resistance ratings parameter symbol t ypical maximum unit jt itabit a t 10 sec r 15 18 junction-to-ambient a steady state r th ja 40 50 c/w junction-to-case r th jc 0.85 1.1 c/w notes a. surface mounted on 1? x1? fr4 board. b. see soa curve for voltage derating. d 5 6 / www.daysemi.jp
2 specifica tions (t j = 25 c unless other wise noted) parameter symbol t est condition min ty p a max unit static drain-source breakdown voltage v ( br)dss v gs = 0 v , i d = 250 a 60 v gate threshold v oltage v gs (th) v ds = v gs , i d = 250 a 2.0 4.0 v gate-body leakage i gs s v ds = 0 v , v gs = 20 v 100 na v ds = 60 v , v gs = 0 v 1 zero gate v oltage drain current i ds s v ds = 60 v , v gs = 0 v , t j = 125 c 50 a g ds s v ds = 60 v , v gs = 0 v , t j = 175 c 250 on-state drain current b i d( on) v ds = 5 v , v gs = 10 v 40 a v gs = 10 v , i d = 40 a 0.013 0.016 drain-source on-state resistance b r ds (on) v gs = 10 v , i d = 40 a, t j = 125 c 0.027 ds (on) v gs = 10 v , i d = 40 a, t j = 175 c 0.037 forward t ransconductance b g fs v ds = 15 v , i d = 40 a 45 s dynamic a input capacitance c is s 1960 output capacitance c os s v gs = 0 v , v ds = 25 v , f = 1 mhz 370 pf reverse t ransfer capacitance c rss 200 t otal gate charge c q g 42 60 gate-source charge c q gs v ds = 40 v , v gs = 10 v , i d = 40 a 7 nc gate-drain charge c q gd ds , gs , d 13 gate resistance r g 0.5 2.7 t urn-on delay time c t d( on) 12 20 rise t ime c t r v dd = 40 v , r l = 1.0 52 80 ns t urn-off delay time c t d( off) v dd = 40 v , r l = 1 . 0 i d 40 a, v ge n = 10 v , r g = 2.5 25 38 ns fall t ime c t f 10 15 source-drain diode ratings and characteristic (t c = 25 c) pulsed current i sm 40 a diode forward v oltage b v sd i f = 40 a, v gs = 0 v 1.0 1.5 v source-drain reverse recovery t ime t rr i f = 40 a, di/dt = 100 a/ s 45 70 ns notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature. d 5 6 / daysemi.jp
3 typical characteristics (25 c unless noted) 0 20 40 60 80 0 20406080100 0 500 1000 1500 2000 2500 3000 0 2 04 06 08 0 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source v oltage (v) ? drain current (a) i d v gs ? gate-to-source v oltage (v) ? drain current (a) i d ? gate-to-source v oltage (v) ? on-resistance ( q g ? t otal gate charge (nc) i d ? drain current (a) v ds ? drain-to-source v oltage (v) c ? capacitance (pf) r ds(on) ) v gs ? t ransconductance (s) g fs 0 20 40 60 80 100 0 246810 0 4 8 12 16 20 0 1530456075 0.00 0.01 0.02 0.03 0.04 0 20406080100 0 20 40 60 80 100 012 34567 ? 55 c t c = 125 c v ds = 10 v i d = 40 a v gs = 10 thru 7 v 5 v v gs = 10 v t c = ? 55 c 25 c 125 c c os s c is s i d ? drain current (a) 6 v 25 c c rss 3, 4 v d 5 6 / www.daysemi.jp
4 typical characteristics (25 c unless noted) 0.0 0.4 0.8 1.2 1.6 2.0 2.4 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction t emperature ( c) v sd ? source-to-drain v oltage (v) ? source current (a) i s 100 1 0.01 0.3 0.6 0.9 1.2 v gs = 10 v i d = 40 a 0 0.1 10 t j = 25 c t j = 150 c r ds (on) ? on-resiistance (normalized) thermal ratings safe operating area v ds ? drain-to-source v oltage (v) ? drain current (a) i d 10 0.1 0.1 1 10 100 limited by r ds (on) 1 1000 normalized thermal t ransient impedance, junction-to-case square w ave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 11 0 normalized ef fective transient thermal impedance maximum a valanche drain current vs. case t emperature t c ? case t emperature ( c) ? drain current (a) i d 0 10 20 30 40 50 0 25 50 75 100 125 150 175 0.2 0.1 duty cycle = 0.5 10 ms 100 ms 1 s, dc 30 100 s 10 s 1 ms 0.05 0.02 single pulse 100 t c = 25 c single pulse d 5 6 / www.daysemi.jp
1 to-252aa case outline no te ? dimension l3 is for reference only. l3 d l4 l5 b b2 e1 e1 d1 c a1 gage plane height (0.5 mm) e b3 e c2 a l h millimeters inches dim. min. max. min. max. a 2.18 2.38 0.086 0.094 a1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 c2 0.46 0.89 0.018 0.035 d 5.97 6.22 0.235 0.245 d1 5.21 - 0.205 - e 6.35 6.73 0.250 0.265 e1 4.32 - 0.170 - h 9.40 10.41 0.370 0.410 e 2.28 bsc 0.090 bsc e1 4.56 bsc 0.180 bsc l 1.40 1.78 0.055 0.070 l3 0.89 1.27 0.035 0.050 l4 - 1.02 - 0.040 l5 1.14 1.52 0.045 0.060 ecn: x12-0247 -rev. m, 24-dec-12 dwg: 5347 package information
1 application note rec ommended minimum pads for dpak (to-252) 0.420 (10.668) recommended mi nimum pads dimensions in inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) return to index re turn to index application note
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recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.daysemi.jp revision: 02-oct-12 1 document number: 72610 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.
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